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| MOSFET INCHANGE IRF730 N-channel mosfet transistor Features With TO-220 package Simple drive requirements Fast switching VDSS=400V; RDS(ON)U 1.0| ;ID=5.5A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25ae SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25ae Total Dissipation@TC=25ae A RATING 400 20 5.5 74 UNIT V V A Ptot Tj Tstg SYMBOL TOR NDU ICO TO-220 SEM E NGTc=25ae Electrical Characteristics CHA IN W Max. Operating Junction temperature Storage temperature 150 ae ae -65~150 PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VGS=0; ID=0.25mA VDS= VGS; ID=0.25mA VGS=10V; ID=3.3A VGS=A 20V;VDS=0 400 2 4 1.0 A 100 V V | nA uA V VDS=400V; VGS=0 IF=5.5A; VGS=0 25 1.6 |
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